English
Spain
Rusia
Italy
ChinaSIR890DP-T1-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SIR890DP-T1-GE3
BESCHREIBUNG
MOSFET N-CH 20V 50A PPAK SO-8
DETAILIERTE BESCHREIBUNG
N-Channel 20 V 50A (Tc) 5W (Ta), 50W (Tc) Surface Mount PowerPAK® SO-8
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2747 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
5W (Ta), 50W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SO-8
Package / Case
PowerPAK® SO-8
Base Product Number
SIR890
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SIR890DP-T1-GE3DKR
SIR890DP-T1-GE3TR
SIR890DPT1GE3
SIR890DP-T1-GE3CT
2266-SIR890DP-T1-GE3
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIR890DP-T1-GE3
Dokumente und Medien
Datasheets
1(SIR890DP)
Featured Product
1(N-Channel TrenchFET® Gen III Power MOSFETs)
PCN Obsolescence/ EOL
1(Mult Mosfet EOL 30/Aug/2018)
PCN Assembly/Origin
1(Multiple Fabracation Changes09/Jul/2014)
HTML Datasheet
1(SIR890DP)
Menge Preis
-
Stellvertreter
-