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ChinaIRF6644TR1PBF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRF6644TR1PBF
BESCHREIBUNG
MOSFET N-CH 100V 10.3A DIRECTFET
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 10.3A (Ta), 60A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MN
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
10.3A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
13mOhm @ 10.3A, 10V
Vgs(th) (Max) @ Id
4.8V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
47 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2210 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.8W (Ta), 89W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DIRECTFET™ MN
Package / Case
DirectFET™ Isometric MN
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
IRF6644TR1PBFDKR
IRF6644TR1PBFTR
IRF6644TR1PBFCT
SP001561794
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF6644TR1PBF
Dokumente und Medien
Datasheets
1(IRF6644(TR)PbF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Featured Product
1(Data Processing Systems)
PCN Obsolescence/ EOL
1(Multiple Devices 20/Dec/2013)
HTML Datasheet
1(IRF6644(TR)PbF)
Product Drawings
()
Menge Preis
-
Stellvertreter
Teil Nr. : IRF6644TRPBF
Hersteller. : Infineon Technologies
Verfügbare Menge. : 23,591
Einzelpreis. : $2.90000
Ersatztyp. : Parametric Equivalent
Verfügbare Menge. : 23,591
Einzelpreis. : $2.90000
Ersatztyp. : Parametric Equivalent