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ChinaTP65H035WS
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TEILNUMMER DES HERSTELLERS
TP65H035WS
BESCHREIBUNG
GANFET N-CH 650V 46.5A TO247-3
DETAILIERTE BESCHREIBUNG
N-Channel 650 V 46.5A (Tc) 156W (Tc) Through Hole TO-247-3
HERSTELLER
Transphorm
STANDARD LEADTIME
16 Weeks
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Transphorm
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
46.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
12V
Rds On (Max) @ Id, Vgs
41mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
4.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
36 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1500 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
156W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
Base Product Number
TP65H035
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Transphorm TP65H035WS
Dokumente und Medien
Datasheets
1(TP65H035WS Datasheet)
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Simulation Models
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Menge Preis
QUANTITÄT: 510
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MinMultiplikator: 1
Stellvertreter
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