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ChinaDF10G6M4N,LF
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TEILNUMMER DES HERSTELLERS
DF10G6M4N,LF
BESCHREIBUNG
TVS DIODE 5.5VWM 25VC 10DFN
DETAILIERTE BESCHREIBUNG
25V Clamp 2A (8/20µs) Ipp Tvs Diode Surface Mount 10-DFN (2.5x1)
HERSTELLER
Toshiba Semiconductor and Storage
STANDARD LEADTIME
EDACAD-MODELL
DF10G6M4N,LF Models
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Type
Zener
Bidirectional Channels
4
Voltage - Reverse Standoff (Typ)
5.5V (Max)
Voltage - Breakdown (Min)
5.6V
Voltage - Clamping (Max) @ Ipp
25V
Current - Peak Pulse (10/1000µs)
2A (8/20µs)
Power - Peak Pulse
30W
Power Line Protection
No
Applications
General Purpose
Capacitance @ Frequency
0.2pF @ 1MHz
Operating Temperature
-
Mounting Type
Surface Mount
Package / Case
10-UFDFN
Supplier Device Package
10-DFN (2.5x1)
Base Product Number
DF10
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.10.0080
Andere Namen
DF10G6M4NLFCT
DF10G6M4N,LF(D
DF10G6M4NLFTR
DF10G6M4NLFDKR
Kategorie
/Product Index/Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes/Toshiba Semiconductor and Storage DF10G6M4N,LF
Dokumente und Medien
Datasheets
1(DF10G6M4N)
Product Training Modules
1(ESD Protection)
Video File
1(Toshiba TVS Diode (EAP-IV))
Featured Product
()
PCN Obsolescence/ EOL
1(DK OBS NOTICE)
EDA Models
1(DF10G6M4N,LF Models)
Menge Preis
-
Stellvertreter
-