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ChinaRND030N20TL
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
RND030N20TL
BESCHREIBUNG
MOSFET N-CH 200V 3A CPT3
DETAILIERTE BESCHREIBUNG
N-Channel 200 V 3A (Tc) 850mW (Ta), 20W (Tc) Surface Mount CPT3
HERSTELLER
Rohm Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
RND030N20TL Models
STANDARDPAKET
2,500
Lagerbestände
Technische Daten
Mfr
Rohm Semiconductor
Series
-
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
870mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id
5.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
6.7 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
270 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
850mW (Ta), 20W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
CPT3
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
RND030
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
846-RND030N20TLTR
RND030N20TLDKR
RND030N20TLTR
RND030N20TLCT
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Rohm Semiconductor RND030N20TL
Dokumente und Medien
Datasheets
1(RND030N20TL)
HTML Datasheet
1(RND030N20)
EDA Models
1(RND030N20TL Models)
Menge Preis
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Stellvertreter
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