English
Spain
Rusia
Italy
ChinaSQP100N04-3M6_GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SQP100N04-3M6_GE3
BESCHREIBUNG
MOSFET N-CH 40V 100A TO220AB
DETAILIERTE BESCHREIBUNG
N-Channel 40 V 100A (Tc) 120W (Tc) Through Hole TO-220AB
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
SQP100N04-3M6_GE3 Models
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
135 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
7200 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
120W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
SQP100
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SQP100N04-3M6_GE3
Dokumente und Medien
Datasheets
1(SQP100N04-3M6)
PCN Obsolescence/ EOL
1(Mult Dev EOL 12/Nov/2021)
HTML Datasheet
1(SQP100N04-3M6)
EDA Models
1(SQP100N04-3M6_GE3 Models)
Menge Preis
-
Stellvertreter
-