Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
SCTH35N65G2V-7
BESCHREIBUNG
SICFET N-CH 650V 45A H2PAK-7
DETAILIERTE BESCHREIBUNG
N-Channel 650 V 45A (Tc) 208W (Tc) Surface Mount H2PAK-7
HERSTELLER
STMicroelectronics
STANDARD LEADTIME
52 Weeks
EDACAD-MODELL
STANDARDPAKET
1,000

Technische Daten

Mfr
STMicroelectronics
Series
-
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V, 20V
Rds On (Max) @ Id, Vgs
67mOhm @ 20A, 20V
Vgs(th) (Max) @ Id
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
73 nC @ 20 V
Vgs (Max)
+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1370 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
208W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
H2PAK-7
Package / Case
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Base Product Number
SCTH35

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

497-SCTH35N65G2V-7DKR
497-SCTH35N65G2V-7TR
497-SCTH35N65G2V-7CT

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics SCTH35N65G2V-7

Dokumente und Medien

Datasheets
1(SCTH35N65G2V-7)
PCN Packaging
1(Mult Dev Inner Box Chg 9/Dec/2021)

Menge Preis

QUANTITÄT: 1000
Einzelpreis: $9.75236
Verpackung: Tape & Reel (TR)
MinMultiplikator: 1000
QUANTITÄT: 500
Einzelpreis: $10.63228
Verpackung: Cut Tape (CT)
MinMultiplikator: 1
QUANTITÄT: 100
Einzelpreis: $11.7322
Verpackung: Cut Tape (CT)
MinMultiplikator: 1
QUANTITÄT: 10
Einzelpreis: $13.565
Verpackung: Cut Tape (CT)
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $15.4
Verpackung: Cut Tape (CT)
MinMultiplikator: 1

Stellvertreter

-