Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
FQPF9N08
BESCHREIBUNG
MOSFET N-CH 80V 7A TO220F
DETAILIERTE BESCHREIBUNG
N-Channel 80 V 7A (Tc) 23W (Tc) Through Hole TO-220F-3
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
FQPF9N08 Models
STANDARDPAKET

Technische Daten

Mfr
onsemi
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
210mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
7.7 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
250 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
23W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220F-3
Package / Case
TO-220-3 Full Pack
Base Product Number
FQPF9

Umweltverträgliche Exportklassifikationen

Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

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Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQPF9N08

Dokumente und Medien

Datasheets
1(FQPF9N08)
Environmental Information
1(onsemi RoHS)
HTML Datasheet
1(FQPF9N08)
EDA Models
1(FQPF9N08 Models)

Menge Preis

-

Stellvertreter

Teil Nr. : IRFI530NPBF
Hersteller. : Infineon Technologies
Verfügbare Menge. : 8,121
Einzelpreis. : $1.49000
Ersatztyp. : Similar