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China50MT060WH
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TEILNUMMER DES HERSTELLERS
50MT060WH
BESCHREIBUNG
IGBT MODULE 600V 114A 658W 12MTP
DETAILIERTE BESCHREIBUNG
IGBT Module PT Half Bridge 600 V 114 A 658 W Chassis Mount 12-MTP
HERSTELLER
Vishay General Semiconductor - Diodes Division
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
15
Lagerbestände
Technische Daten
Mfr
Vishay General Semiconductor - Diodes Division
Series
-
Product Status
Obsolete
IGBT Type
PT
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (Max)
600 V
Current - Collector (Ic) (Max)
114 A
Power - Max
658 W
Vce(on) (Max) @ Vge, Ic
3.2V @ 15V, 100A
Current - Collector Cutoff (Max)
400 µA
Input Capacitance (Cies) @ Vce
7.1 nF @ 30 V
Input
Standard
NTC Thermistor
No
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
12-MTP Module
Supplier Device Package
12-MTP
Base Product Number
50MT060
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
VS50MT060WH
VS50MT060WH-ND
*50MT060WH
VS-50MT060WH
VS-50MT060WH-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/IGBT Modules/Vishay General Semiconductor - Diodes Division 50MT060WH
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HTML Datasheet
1(50MT060WH)
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