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China2SK3662(F)
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
2SK3662(F)
BESCHREIBUNG
MOSFET N-CH 60V 35A TO220NIS
DETAILIERTE BESCHREIBUNG
N-Channel 60 V 35A (Ta) 35W (Tc) Through Hole TO-220NIS
HERSTELLER
Toshiba Semiconductor and Storage
STANDARD LEADTIME
EDACAD-MODELL
2SK3662(F) Models
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Toshiba Semiconductor and Storage
Series
U-MOSIII
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
35A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Rds On (Max) @ Id, Vgs
12.5mOhm @ 18A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
91 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5120 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
35W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220NIS
Package / Case
TO-220-3 Full Pack
Base Product Number
2SK3662
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Toshiba Semiconductor and Storage 2SK3662(F)
Dokumente und Medien
Datasheets
1(Mosfets Prod Guide)
HTML Datasheet
1(Mosfets Prod Guide)
EDA Models
1(2SK3662(F) Models)
Menge Preis
-
Stellvertreter
-