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ChinaIPD082N10N3GBTMA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IPD082N10N3GBTMA1
BESCHREIBUNG
MOSFET N-CH 100V 80A TO252-3
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 80A (Tc) 125W (Tc) Surface Mount PG-TO252-3
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
2,500
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
8.2mOhm @ 73A, 10V
Vgs(th) (Max) @ Id
3.5V @ 75µA
Gate Charge (Qg) (Max) @ Vgs
55 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3980 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number
IPD082N
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
IPD082N10N3GBTMA1TR
SP000485986
IPD082N10N3 G
IPD082N10N3 G-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPD082N10N3GBTMA1
Dokumente und Medien
Datasheets
1(IPx08xN10N3 G)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
PCN Packaging
()
HTML Datasheet
1(IPx08xN10N3 G)
Menge Preis
-
Stellvertreter
Teil Nr. : IPD082N10N3GATMA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 31,480
Einzelpreis. : $2.02000
Ersatztyp. : Direct
Verfügbare Menge. : 31,480
Einzelpreis. : $2.02000
Ersatztyp. : Direct
Teil Nr. : STD100N10F7
Hersteller. : STMicroelectronics
Verfügbare Menge. : 13,325
Einzelpreis. : $2.69000
Ersatztyp. : Similar
Verfügbare Menge. : 13,325
Einzelpreis. : $2.69000
Ersatztyp. : Similar