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ChinaVS-GB75LA60UF
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TEILNUMMER DES HERSTELLERS
VS-GB75LA60UF
BESCHREIBUNG
IGBT MOD 600V 109A 447W SOT227
DETAILIERTE BESCHREIBUNG
IGBT Module NPT Single 600 V 109 A 447 W Chassis Mount SOT-227
HERSTELLER
Vishay General Semiconductor - Diodes Division
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Vishay General Semiconductor - Diodes Division
Series
-
Package
Tube
Product Status
Obsolete
IGBT Type
NPT
Configuration
Single
Voltage - Collector Emitter Breakdown (Max)
600 V
Current - Collector (Ic) (Max)
109 A
Power - Max
447 W
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 35A
Current - Collector Cutoff (Max)
50 µA
Input
Standard
NTC Thermistor
No
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
SOT-227-4, miniBLOC
Supplier Device Package
SOT-227
Base Product Number
GB75
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/IGBT Modules/Vishay General Semiconductor - Diodes Division VS-GB75LA60UF
Dokumente und Medien
PCN Obsolescence/ EOL
1(Mult Dev EOL 10/Jan/2020)
PCN Design/Specification
1(Ink to Laser 03/Feb/2016)
HTML Datasheet
1(VS-GB75LA60UF)
Menge Preis
-
Stellvertreter
-