Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
FET Feature
Logic Level Gate, 4V Drive
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
8A, 6A
Rds On (Max) @ Id, Vgs
25mOhm @ 8A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
7.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
470pF @ 10V
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
6-SMD, Flat Leads
Supplier Device Package
MPT6
Base Product Number
MP6M14