English
Spain
Rusia
Italy
ChinaLN100LA-G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
LN100LA-G
BESCHREIBUNG
MOSFET 2N-CH 1200V 6LFGA
DETAILIERTE BESCHREIBUNG
Mosfet Array 1200V (1.2kV) 350mW Surface Mount 6-LFGA (3x3)
HERSTELLER
Microchip Technology
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Microchip Technology
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Cascoded)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
-
Rds On (Max) @ Id, Vgs
3000Ohm @ 2mA, 2.8V
Vgs(th) (Max) @ Id
1.6V @ 10µA
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
50pF @ 25V
Power - Max
350mW
Operating Temperature
-25°C ~ 125°C (TJ)
Mounting Type
Surface Mount
Package / Case
6-VFLGA
Supplier Device Package
6-LFGA (3x3)
Base Product Number
LN100
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Microchip Technology LN100LA-G
Dokumente und Medien
Datasheets
1(LN100)
Environmental Information
()
PCN Packaging
1(Label and Packing Changes 23/Sep/2015)
HTML Datasheet
1(LN100)
Menge Preis
-
Stellvertreter
-