Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IPD65R650CEATMA1
BESCHREIBUNG
MOSFET N-CH 650V 10.1A TO252-3
DETAILIERTE BESCHREIBUNG
N-Channel 650 V 10.1A (Tc) 86W (Tc) Surface Mount PG-TO252-3
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
2,500

Technische Daten

Mfr
Infineon Technologies
Series
CoolMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
10.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
650mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id
3.5V @ 210µA
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
440 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
86W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
IPD65R

Umweltverträgliche Exportklassifikationen

Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

-

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPD65R650CEATMA1

Dokumente und Medien

Datasheets
1(IPA65R650CE, IPD65R650CE)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPA65R650CE, IPD65R650CE)

Menge Preis

-

Stellvertreter

Teil Nr. : IPD65R650CEAUMA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 2,270
Einzelpreis. : $0.95000
Ersatztyp. : Similar
Teil Nr. : IXTY4N65X2
Hersteller. : IXYS
Verfügbare Menge. : 70
Einzelpreis. : $2.66000
Ersatztyp. : Similar
Teil Nr. : TK7P65W,RQ
Hersteller. : Toshiba Semiconductor and Storage
Verfügbare Menge. : 1,408
Einzelpreis. : $1.56000
Ersatztyp. : Similar