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ChinaIPB034N06N3G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IPB034N06N3G
BESCHREIBUNG
N-CHANNEL POWER MOSFET
DETAILIERTE BESCHREIBUNG
N-Channel 60 V 100A (Tc) 167W (Tc) Surface Mount PG-TO263-7-3
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
315
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
OptiMOS™ 3
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
4V @ 93µA
Gate Charge (Qg) (Max) @ Vgs
130 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
11000 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
167W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-7-3
Package / Case
TO-263-7, D2PAK (6 Leads + Tab)
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-IPB034N06N3G
IFEINFIPB034N06N3G
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPB034N06N3G
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 315
Einzelpreis: $0.95
Verpackung: Bulk
MinMultiplikator: 315
Verpackung: Bulk
MinMultiplikator: 315
Stellvertreter
-