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ChinaAPT31N80JC3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
APT31N80JC3
BESCHREIBUNG
MOSFET N-CH 800V 31A ISOTOP
DETAILIERTE BESCHREIBUNG
N-Channel 800 V 31A (Tc) 833W (Tc) Chassis Mount ISOTOP®
HERSTELLER
Microsemi Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
10
Lagerbestände
Technische Daten
Mfr
Microsemi Corporation
Series
CoolMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
145mOhm @ 22A, 10V
Vgs(th) (Max) @ Id
3.9V @ 2mA
Gate Charge (Qg) (Max) @ Vgs
355 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4510 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
833W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
ISOTOP®
Package / Case
SOT-227-4, miniBLOC
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
150-APT31N80JC3
APT31N80JC3-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Microsemi Corporation APT31N80JC3
Dokumente und Medien
Datasheets
1(APT31N80JC3)
Environmental Information
()
HTML Datasheet
1(APT31N80JC3)
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