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Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IPA028N08N3GXKSA1
BESCHREIBUNG
MOSFET N-CH 80V 89A TO220-FP
DETAILIERTE BESCHREIBUNG
N-Channel 80 V 89A (Tc) 42W (Tc) Through Hole PG-TO220-FP
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
50
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
89A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
2.8mOhm @ 89A, 10V
Vgs(th) (Max) @ Id
3.5V @ 270µA
Gate Charge (Qg) (Max) @ Vgs
206 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
14200 pF @ 40 V
FET Feature
-
Power Dissipation (Max)
42W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-FP
Package / Case
TO-220-3 Full Pack
Base Product Number
IPA028
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
INFINFIPA028N08N3GXKSA1
IPA028N08N3 G-ND
2156-IPA028N08N3GXKSA1
IPA028N08N3G
IPA028N08N3 G
SP000446770
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPA028N08N3GXKSA1
Dokumente und Medien
Datasheets
1(IPA028N08N3)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPA028N08N3)
Simulation Models
1(MOSFET OptiMOS™ 80V N-Channel Spice Model)
Menge Preis
-
Stellvertreter
Teil Nr. : TK100A08N1,S4X
Hersteller. : Toshiba Semiconductor and Storage
Verfügbare Menge. : 0
Einzelpreis. : $3.61000
Ersatztyp. : Similar
Verfügbare Menge. : 0
Einzelpreis. : $3.61000
Ersatztyp. : Similar