Mfr
GeneSiC Semiconductor
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
1700 V
Current - Average Rectified (Io)
25A
Voltage - Forward (Vf) (Max) @ If
1.8 V @ 5 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
6 µA @ 1700 V
Capacitance @ Vr, F
334pF @ 1V, 1MHz
Mounting Type
Through Hole
Supplier Device Package
TO-247-2
Operating Temperature - Junction
-55°C ~ 175°C
Base Product Number
GB05MPS17