English
Spain
Rusia
Italy
ChinaRQA0002DNSTB-E
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
RQA0002DNSTB-E
BESCHREIBUNG
MOSFET N-CH 16V 3.8A 2HWSON
DETAILIERTE BESCHREIBUNG
N-Channel 16 V 3.8A (Ta) 15W (Tc) Surface Mount 2-HWSON (5x4)
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Renesas Electronics Corporation
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
16 V
Current - Continuous Drain (Id) @ 25°C
3.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
750mV @ 1mA
Vgs (Max)
±5V
Input Capacitance (Ciss) (Max) @ Vds
102 pF @ 0 V
FET Feature
-
Power Dissipation (Max)
15W (Tc)
Operating Temperature
150°C
Mounting Type
Surface Mount
Supplier Device Package
2-HWSON (5x4)
Package / Case
2-DFN Exposed Pad
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Renesas Electronics Corporation RQA0002DNSTB-E
Dokumente und Medien
Datasheets
1(RQA0002DNS)
PCN Obsolescence/ EOL
1(Mult Dev EOL 15/Dec/2018)
PCN Packaging
1(Label Change-All Devices 01/Dec/2022)
HTML Datasheet
1(RQA0002DNS)
Menge Preis
-
Stellvertreter
-