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ChinaIPS60R210PFD7SAKMA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IPS60R210PFD7SAKMA1
BESCHREIBUNG
MOSFET N-CH 650V 16A TO251-3
DETAILIERTE BESCHREIBUNG
N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
75
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
CoolMOS™PFD7
Package
Tube
Product Status
Last Time Buy
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
210mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id
4.5V @ 240µA
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1015 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
64W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO251-3
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number
IPS60R
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
448-IPS60R210PFD7SAKMA1
2156-IPS60R210PFD7SAKMA1
SP003235784
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPS60R210PFD7SAKMA1
Dokumente und Medien
Datasheets
1(IPS60R210PFD7S)
Menge Preis
QUANTITÄT: 100
Einzelpreis: $1.1352
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 10
Einzelpreis: $1.426
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $1.72
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
Stellvertreter
-