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China2SJ646-TL-E
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
2SJ646-TL-E
BESCHREIBUNG
P-CHANNEL SILICON MOSFET
DETAILIERTE BESCHREIBUNG
P-Channel 30 V 8A 1W (Ta), 15W (Tc) Through Hole TP
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,401
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
8A
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Rds On (Max) @ Id, Vgs
75mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
510 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
1W (Ta), 15W (Tc)
Operating Temperature
150°C
Mounting Type
Through Hole
Supplier Device Package
TP
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
ONSFSC2SJ646-TL-E
2156-2SJ646-TL-E
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi 2SJ646-TL-E
Dokumente und Medien
-
Menge Preis
QUANTITÄT: 1401
Einzelpreis: $0.21
Verpackung: Bulk
MinMultiplikator: 1401
Verpackung: Bulk
MinMultiplikator: 1401
Stellvertreter
-