English
Spain
Rusia
Italy
ChinaSSM6P35FE,LM
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SSM6P35FE,LM
BESCHREIBUNG
MOSFET 2P-CH 20V 0.1A ES6
DETAILIERTE BESCHREIBUNG
Mosfet Array 20V 100mA 150mW Surface Mount ES6
HERSTELLER
Toshiba Semiconductor and Storage
STANDARD LEADTIME
EDACAD-MODELL
SSM6P35FE,LM Models
STANDARDPAKET
4,000
Lagerbestände
Technische Daten
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tape & Reel (TR)
Product Status
Active
Technology
MOSFET (Metal Oxide)
Configuration
2 P-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
100mA
Rds On (Max) @ Id, Vgs
8Ohm @ 50mA, 4V
Vgs(th) (Max) @ Id
1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
12.2pF @ 3V
Power - Max
150mW
Operating Temperature
150°C
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Supplier Device Package
ES6
Base Product Number
SSM6P35
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
SSM6P35FELM
SSM6P35FE,LM(T
SSM6P35FE,LM(B
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Toshiba Semiconductor and Storage SSM6P35FE,LM
Dokumente und Medien
Datasheets
1(SSM6P35FE)
EDA Models
1(SSM6P35FE,LM Models)
Menge Preis
-
Stellvertreter
-