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ChinaIPL60R2K1C6SATMA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IPL60R2K1C6SATMA1
BESCHREIBUNG
MOSFET N-CH 600V 2.3A THIN-PAK
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 2.3A (Tc) 21.6W (Tc) Surface Mount PG-TSON-8-2
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
IPL60R2K1C6SATMA1 Models
STANDARDPAKET
5,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
CoolMOS™ C6
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
2.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.1Ohm @ 760mA, 10V
Vgs(th) (Max) @ Id
3.5V @ 60µA
Gate Charge (Qg) (Max) @ Vgs
6.7 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
140 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
21.6W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TSON-8-2
Package / Case
8-PowerTDFN
Base Product Number
IPL60R
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
INFINFIPL60R2K1C6SATMA1
2156-IPL60R2K1C6SATMA1
SP001163026
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPL60R2K1C6SATMA1
Dokumente und Medien
Datasheets
1(IPL60R2K1C6S)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPL60R2K1C6S)
EDA Models
1(IPL60R2K1C6SATMA1 Models)
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