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ChinaAPT28F60B
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
APT28F60B
BESCHREIBUNG
MOSFET N-CH 600V 30A TO247
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 30A (Tc) 520W (Tc) Through Hole TO-247 [B]
HERSTELLER
Microsemi Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
30
Lagerbestände
Technische Daten
Mfr
Microsemi Corporation
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
250mOhm @ 14A, 10V
Vgs(th) (Max) @ Id
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
140 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
5575 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
520W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247 [B]
Package / Case
TO-247-3
Base Product Number
APT28F60
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
APT28F60BMI
150-APT28F60B
APT28F60BMI-ND
APT28F60B-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Microsemi Corporation APT28F60B
Dokumente und Medien
Datasheets
1(High-Voltage Power Discretes and Modules)
Environmental Information
()
HTML Datasheet
1(Power Products Catalog)
Product Drawings
1(TO-247 Front)
Menge Preis
-
Stellvertreter
-