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ChinaCSD25303W1015
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
CSD25303W1015
BESCHREIBUNG
MOSFET P-CH 20V 3A 6DSBGA
DETAILIERTE BESCHREIBUNG
P-Channel 20 V 3A (Tc) 1.5W (Ta) Surface Mount 6-DSBGA (1x1.5)
HERSTELLER
Texas Instruments
STANDARD LEADTIME
EDACAD-MODELL
CSD25303W1015 Models
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Texas Instruments
Series
NexFET™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
58mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
4.3 nC @ 4.5 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
435 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
1.5W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
6-DSBGA (1x1.5)
Package / Case
6-UFBGA, DSBGA
Base Product Number
CSD2530
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-CSD25303W1015-TITR
-296-28317-1-ND
-CSD25303W1015-NDR
296-28317-6
296-28317-2
TEXTISCSD25303W1015
296-28317-1
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Texas Instruments CSD25303W1015
Dokumente und Medien
Datasheets
1(CSD25303W1015)
Product Training Modules
1(NexFET MOSFET Technology)
Video File
1(PowerStack™ Packaging Technology Overview)
PCN Obsolescence/ EOL
1(Multiple Devices 20/Feb/2014)
PCN Packaging
1(DSBGA-6L Carrier Tape Change 28/Oct/2013)
HTML Datasheet
1(CSD25303W1015)
EDA Models
1(CSD25303W1015 Models)
Menge Preis
-
Stellvertreter
Teil Nr. : CSD25304W1015
Hersteller. : Texas Instruments
Verfügbare Menge. : 3,000
Einzelpreis. : $0.51000
Ersatztyp. : Direct
Verfügbare Menge. : 3,000
Einzelpreis. : $0.51000
Ersatztyp. : Direct