Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
EPC2100ENGRT
BESCHREIBUNG
GANFET 2 N-CH 30V 9.5A/38A DIE
DETAILIERTE BESCHREIBUNG
Mosfet Array 30V 10A (Ta), 40A (Ta) Surface Mount Die
HERSTELLER
EPC
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
500

Technische Daten

Mfr
EPC
Series
eGaN®
Package
Tape & Reel (TR)
Product Status
Active
Technology
GaNFET (Gallium Nitride)
Configuration
2 N-Channel (Half Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
10A (Ta), 40A (Ta)
Rds On (Max) @ Id, Vgs
8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
Vgs(th) (Max) @ Id
2.5V @ 4mA, 2.5V @ 16mA
Gate Charge (Qg) (Max) @ Vgs
4.9nC @ 15V, 19nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds
475pF @ 15V, 1960pF @ 15V
Power - Max
-
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
Die
Supplier Device Package
Die
Base Product Number
EPC210

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0040

Andere Namen

917-EPC2100ENGRDKR
917-EPC2100ENGRCT
917-EPC2100ENGRTR

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/EPC EPC2100ENGRT

Dokumente und Medien

Datasheets
1(EPC2100)
Product Training Modules
1(eGaN Integrated GaN Power)
Environmental Information
()
Reference Design Library
1(EPC9059: 50A, 0 ~ 20V, Half Bridge)
HTML Datasheet
1(EPC2100)
Forum Discussions
1(What do GaN FETS look like and how do they work?)

Menge Preis

QUANTITÄT: 2500
Einzelpreis: $3.88406
Verpackung: Tape & Reel (TR)
MinMultiplikator: 500
QUANTITÄT: 1000
Einzelpreis: $4.14504
Verpackung: Tape & Reel (TR)
MinMultiplikator: 500
QUANTITÄT: 500
Einzelpreis: $4.6056
Verpackung: Tape & Reel (TR)
MinMultiplikator: 500

Stellvertreter

-