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ChinaIPP084N06L3GHKSA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IPP084N06L3GHKSA1
BESCHREIBUNG
MOSFET N-CH 60V 50A TO220-3
DETAILIERTE BESCHREIBUNG
N-Channel 60 V 50A (Tc) 79W (Tc) Through Hole PG-TO220-3
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
500
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
8.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
2.2V @ 34µA
Gate Charge (Qg) (Max) @ Vgs
29 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4900 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
79W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3
Package / Case
TO-220-3
Base Product Number
IPP084N
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPP084N06L3GHKSA1
Dokumente und Medien
Datasheets
1(IPB081N06L3, IPP084N06L3, IPI084N06L3 G)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPB081N06L3, IPP084N06L3, IPI084N06L3 G)
Menge Preis
-
Stellvertreter
Teil Nr. : IPP084N06L3GXKSA1
Hersteller. : Rochester Electronics, LLC
Verfügbare Menge. : 1,664
Einzelpreis. : $0.79000
Ersatztyp. : Direct
Verfügbare Menge. : 1,664
Einzelpreis. : $0.79000
Ersatztyp. : Direct
Teil Nr. : IRLZ44PBF
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 1,822
Einzelpreis. : $2.77000
Ersatztyp. : Similar
Verfügbare Menge. : 1,822
Einzelpreis. : $2.77000
Ersatztyp. : Similar