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China2SC4159D
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
2SC4159D
BESCHREIBUNG
NPN SILICON TRANSISTOR
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 160 V 1.5 A 100MHz 15 W Through Hole TO-220ML
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,110
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
1.5 A
Voltage - Collector Emitter Breakdown (Max)
160 V
Vce Saturation (Max) @ Ib, Ic
300mV @ 50mA, 500mA
Current - Collector Cutoff (Max)
10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 300mA, 5V
Power - Max
15 W
Frequency - Transition
100MHz
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220ML
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0075
Andere Namen
2156-2SC4159D
ONSSNY2SC4159D
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi 2SC4159D
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 1110
Einzelpreis: $0.27
Verpackung: Bulk
MinMultiplikator: 1110
Verpackung: Bulk
MinMultiplikator: 1110
Stellvertreter
-