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China2SC2839E-SPA-AC
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TEILNUMMER DES HERSTELLERS
2SC2839E-SPA-AC
BESCHREIBUNG
NPN EPITAXIAL PLANAR SILICON
DETAILIERTE BESCHREIBUNG
RF Transistor NPN 20V 30mA 320MHz 150mW Through Hole 3-SPA
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
6,662
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
20V
Frequency - Transition
320MHz
Noise Figure (dB Typ @ f)
3dB @ 100MHz
Gain
25dB
Power - Max
150mW
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 1mA, 6V
Current - Collector (Ic) (Max)
30mA
Mounting Type
Through Hole
Package / Case
3-SIP
Supplier Device Package
3-SPA
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
Andere Namen
2156-2SC2839E-SPA-AC
ONSONS2SC2839E-SPA-AC
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar RF Transistors/onsemi 2SC2839E-SPA-AC
Dokumente und Medien
Datasheets
1(2SC2839E-SPA-AC)
Menge Preis
QUANTITÄT: 6662
Einzelpreis: $0.05
Verpackung: Bulk
MinMultiplikator: 6662
Verpackung: Bulk
MinMultiplikator: 6662
Stellvertreter
-