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ChinaSPP08N80C3XK
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SPP08N80C3XK
BESCHREIBUNG
MOSFET N-CH 800V 8A TO220-3
DETAILIERTE BESCHREIBUNG
N-Channel 800 V 8A (Tc) 104W (Tc) Through Hole PG-TO220-3
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
CoolMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
650mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id
3.9V @ 470µA
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1100 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
104W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3
Package / Case
TO-220-3
Base Product Number
SPP08N
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
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Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies SPP08N80C3XK
Dokumente und Medien
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Menge Preis
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Stellvertreter
Teil Nr. : SPP08N80C3XKSA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 1,997
Einzelpreis. : $2.47000
Ersatztyp. : Parametric Equivalent
Verfügbare Menge. : 1,997
Einzelpreis. : $2.47000
Ersatztyp. : Parametric Equivalent