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ChinaNSBA123EF3T5G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
NSBA123EF3T5G
BESCHREIBUNG
TRANS PREBIAS PNP 50V SOT1123
DETAILIERTE BESCHREIBUNG
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 254 mW Surface Mount SOT-1123
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
NSBA123EF3T5G Models
STANDARDPAKET
8,000
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Active
Transistor Type
PNP - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
2.2 kOhms
Resistor - Emitter Base (R2)
2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
8 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic
250mV @ 5mA, 10mA
Current - Collector Cutoff (Max)
500nA
Power - Max
254 mW
Mounting Type
Surface Mount
Package / Case
SOT-1123
Supplier Device Package
SOT-1123
Base Product Number
NSBA123
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
ONSONSNSBA123EF3T5G
2156-NSBA123EF3T5G-OS
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/onsemi NSBA123EF3T5G
Dokumente und Medien
Datasheets
1(MUN(2,5)131, MMUN2131L, DTA123Exx, NSBA123EF3)
Environmental Information
()
PCN Design/Specification
1(Mult Devices Tape Design 06/Mar/2018)
HTML Datasheet
1(MUN(2,5)131, MMUN2131L, DTA123Exx, NSBA123EF3)
EDA Models
1(NSBA123EF3T5G Models)
Menge Preis
-
Stellvertreter
-