Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IXFT320N10T2-TRL
BESCHREIBUNG
MOSFET N-CH 100V 320A TO268
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 320A (Tc) 1kW (Tc) Surface Mount TO-268
HERSTELLER
IXYS
STANDARD LEADTIME
45 Weeks
EDACAD-MODELL
STANDARDPAKET
400

Technische Daten

Mfr
IXYS
Series
HiPerFET™, TrenchT2™
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
320A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
430 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
26000 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1kW (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-268
Package / Case
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Base Product Number
IXFT320

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

-

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXFT320N10T2-TRL

Dokumente und Medien

Environmental Information
1(Ixys IC REACH)

Menge Preis

QUANTITÄT: 400
Einzelpreis: $15.22088
Verpackung: Tape & Reel (TR)
MinMultiplikator: 400

Stellvertreter

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