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ChinaSTU6N65M2-S
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
STU6N65M2-S
BESCHREIBUNG
MOSFET N-CH 650V 4A IPAK
DETAILIERTE BESCHREIBUNG
N-Channel 650 V 4A (Tc) 60W (Tc) Through Hole IPAK
HERSTELLER
STMicroelectronics
STANDARD LEADTIME
16 Weeks
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
STMicroelectronics
Series
MDmesh™ M2
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.35Ohm @ 2A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
9.8 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
226 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
60W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
IPAK
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number
STU6N65
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics STU6N65M2-S
Dokumente und Medien
-
Menge Preis
QUANTITÄT: 3000
Einzelpreis: $0.50555
Verpackung: Tube
MinMultiplikator: 3000
Verpackung: Tube
MinMultiplikator: 3000
Stellvertreter
Teil Nr. : STU6N65M2
Hersteller. : STMicroelectronics
Verfügbare Menge. : 543
Einzelpreis. : $1.25000
Ersatztyp. : Parametric Equivalent
Verfügbare Menge. : 543
Einzelpreis. : $1.25000
Ersatztyp. : Parametric Equivalent