Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IPAN60R280P7SXKSA1
BESCHREIBUNG
MOSFET N-CH 650V 12A TO220
DETAILIERTE BESCHREIBUNG
N-Channel 650 V 12A (Tc) 24W (Tc) Through Hole PG-TO220 Full Pack
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
IPAN60R280P7SXKSA1 Models
STANDARDPAKET
50

Technische Daten

Mfr
Infineon Technologies
Series
CoolMOS™ P7
Package
Tube
Product Status
Last Time Buy
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
280mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id
4V @ 190µA
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
761 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
24W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220 Full Pack
Package / Case
TO-220-3 Full Pack
Base Product Number
IPAN60

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

SP001866076
448-IPAN60R280P7SXKSA1
2156-IPAN60R280P7SXKSA1

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPAN60R280P7SXKSA1

Dokumente und Medien

Datasheets
1(IPAN60R280P7S)
HTML Datasheet
1(IPAN60R280P7S)
EDA Models
1(IPAN60R280P7SXKSA1 Models)

Menge Preis

QUANTITÄT: 100
Einzelpreis: $0.9186
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 10
Einzelpreis: $1.181
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $1.44
Verpackung: Tube
MinMultiplikator: 1

Stellvertreter

Teil Nr. : IPA60R180P7XKSA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 484
Einzelpreis. : $2.58000
Ersatztyp. : Similar