English
Spain
Rusia
Italy
ChinaPD20010-E
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
PD20010-E
BESCHREIBUNG
RF MOSFET LDMOS 13.6V PWRSO-10RF
DETAILIERTE BESCHREIBUNG
RF Mosfet 13.6 V 150 mA 2GHz 11dB 10W PowerSO-10RF (Formed Lead)
HERSTELLER
STMicroelectronics
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
50
Lagerbestände
Technische Daten
Mfr
STMicroelectronics
Series
-
Package
Tube
Product Status
Obsolete
Technology
LDMOS
Frequency
2GHz
Gain
11dB
Voltage - Test
13.6 V
Current Rating (Amps)
5A
Noise Figure
-
Current - Test
150 mA
Power - Output
10W
Voltage - Rated
40 V
Package / Case
PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Supplier Device Package
PowerSO-10RF (Formed Lead)
Base Product Number
PD20010
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
PD20010-E-ND
497-13044-5
PD20010E
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/RF FETs, MOSFETs/STMicroelectronics PD20010-E
Dokumente und Medien
Other Related Documents
1(PD20010-E View All Specifications)
Product Training Modules
()
PCN Assembly/Origin
1(Mult Dev Assembly Chg 18/Oct/2019)
PCN Packaging
1(Material Barrier Bag 17/Dec/2020)
HTML Datasheet
1(PD20010-E)
Menge Preis
-
Stellvertreter
Teil Nr. : ON5407,135
Hersteller. : NXP USA Inc.
Verfügbare Menge. : 0
Einzelpreis. : $0.00000
Ersatztyp. : Similar
Verfügbare Menge. : 0
Einzelpreis. : $0.00000
Ersatztyp. : Similar