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ChinaPSMN023-80LS,115
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
PSMN023-80LS,115
BESCHREIBUNG
MOSFET N-CH 80V 34A 8DFN
DETAILIERTE BESCHREIBUNG
N-Channel 80 V 34A (Tc) 65W (Tc) Surface Mount 8-DFN3333 (3.3x3.3)
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,400
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
34A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
23mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1295 pF @ 40 V
FET Feature
-
Power Dissipation (Max)
65W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-DFN3333 (3.3x3.3)
Package / Case
8-VDFN Exposed Pad
Base Product Number
PSMN0
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
568-5583-1
568-5583-2
954-PSMN023-80LS115
PSMN02380LS115
934064653115
568-5583-6
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. PSMN023-80LS,115
Dokumente und Medien
Environmental Information
()
PCN Obsolescence/ EOL
()
PCN Packaging
1(All Dev Label Update 15/Dec/2020)
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