Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IPU60R600C6BKMA1
BESCHREIBUNG
MOSFET N-CH 600V 7.3A TO251-3
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 7.3A (Tc) 63W (Tc) Through Hole PG-TO251-3
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
75

Technische Daten

Mfr
Infineon Technologies
Series
CoolMOS™
Package
Tube
Product Status
Discontinued at allaboutcomponents.com
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
600mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id
3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs
20.5 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
440 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
63W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO251-3
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number
IPU60R

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

-

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPU60R600C6BKMA1

Dokumente und Medien

Datasheets
1(IPU60R600C6)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPU60R600C6)

Menge Preis

-

Stellvertreter

Teil Nr. : STU12N60M2
Hersteller. : STMicroelectronics
Verfügbare Menge. : 0
Einzelpreis. : $0.73479
Ersatztyp. : Similar