Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IRF6794MTR1PBF
BESCHREIBUNG
MOSFET N-CH 25V 32A DIRECTFET
DETAILIERTE BESCHREIBUNG
N-Channel 25 V 32A (Ta), 200A (Tc) 2.8W (Ta), 100W (Tc) Surface Mount DIRECTFET™ MX
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,000

Technische Daten

Mfr
Infineon Technologies
Series
HEXFET®
Package
Cut Tape (CT)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
32A (Ta), 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.7mOhm @ 32A, 10V
Vgs(th) (Max) @ Id
2.35V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
47 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4420 pF @ 13 V
FET Feature
Schottky Diode (Body)
Power Dissipation (Max)
2.8W (Ta), 100W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DIRECTFET™ MX
Package / Case
DirectFET™ Isometric MX

Umweltverträgliche Exportklassifikationen

Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

IRF6794MTR1PBFCT
IRF6794MTR1PBFTR
SP001531602
IRF6794MTR1PBFDKR

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF6794MTR1PBF

Dokumente und Medien

Datasheets
1(IRF6794M(TR)1PBF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(Discrete Power MOSFETs 40V and Below)
Featured Product
1(Data Processing Systems)
Product Drawings
1(IR Hexfet Circuit)

Menge Preis

QUANTITÄT: 100
Einzelpreis: $1.6498
Verpackung: Cut Tape (CT)
MinMultiplikator: 1
QUANTITÄT: 10
Einzelpreis: $1.95
Verpackung: Cut Tape (CT)
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $2.28
Verpackung: Cut Tape (CT)
MinMultiplikator: 1

Stellvertreter

-