English
Spain
Rusia
Italy
ChinaS72VS256RE0AHBJ10
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
S72VS256RE0AHBJ10
BESCHREIBUNG
IC FLASH RAM 256MBIT PAR 133FBGA
DETAILIERTE BESCHREIBUNG
FLASH, DRAM Memory IC 256Mbit (FLASH), 256Mbit (DDR DRAM) Parallel 108 MHz 133-FBGA (8x8)
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
S72VS256RE0AHBJ10 Models
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
VS-R
Package
Tray
Product Status
Obsolete
allaboutcomponents.com Programmable
Not Verified
Memory Type
Non-Volatile, Volatile
Memory Format
FLASH, RAM
Technology
FLASH, DRAM
Memory Size
256Mbit (FLASH), 256Mbit (DDR DRAM)
Memory Organization
-
Memory Interface
Parallel
Clock Frequency
108 MHz
Write Cycle Time - Word, Page
-
Voltage - Supply
1.7V ~ 1.95V
Operating Temperature
-25°C ~ 85°C (TA)
Mounting Type
Surface Mount
Package / Case
133-VFBGA
Supplier Device Package
133-FBGA (8x8)
Base Product Number
S72VS256
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
3A991B1A
HTSUS
8542.32.0071
Andere Namen
-
Kategorie
/Product Index/Integrated Circuits (ICs)/Memory/Memory/Infineon Technologies S72VS256RE0AHBJ10
Dokumente und Medien
Environmental Information
1(RoHS Certificate)
PCN Obsolescence/ EOL
1(Mult Dev EOL 20/Oct/2020)
PCN Design/Specification
1(Mult Device Serial No Mark 26/Sep/2017)
PCN Packaging
()
EDA Models
1(S72VS256RE0AHBJ10 Models)
Menge Preis
-
Stellvertreter
-