Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
C2M1000170D
BESCHREIBUNG
SICFET N-CH 1700V 4.9A TO247-3
DETAILIERTE BESCHREIBUNG
N-Channel 1700 V 4.9A (Tc) 69W (Tc) Through Hole TO-247-3
HERSTELLER
Wolfspeed, Inc.
STANDARD LEADTIME
34 Weeks
EDACAD-MODELL
C2M1000170D Models
STANDARDPAKET

Technische Daten

Mfr
Wolfspeed, Inc.
Series
Z-FET™
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1700 V
Current - Continuous Drain (Id) @ 25°C
4.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
1.1Ohm @ 2A, 20V
Vgs(th) (Max) @ Id
4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 20 V
Vgs (Max)
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
191 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
69W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
Base Product Number
C2M1000170

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

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Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Wolfspeed, Inc. C2M1000170D

Dokumente und Medien

Datasheets
1(C2M1000170D)
Product Training Modules
1(Second-Generation C2M1000170D Silicon Carbide MOSFET)
Featured Product
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PCN Design/Specification
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Article Library
1(Use SiC-Based MOSFETs to Improve Power Conversion Efficiency)
HTML Datasheet
1(C2M1000170D)
EDA Models
1(C2M1000170D Models)

Menge Preis

QUANTITÄT: 1000
Einzelpreis: $6.44936
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 500
Einzelpreis: $7.16596
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 100
Einzelpreis: $8.1214
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 10
Einzelpreis: $9.746
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $11.37
Verpackung: Tube
MinMultiplikator: 1

Stellvertreter

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