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ChinaSIJ458DP-T1-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SIJ458DP-T1-GE3
BESCHREIBUNG
MOSFET N-CH 30V 60A PPAK SO-8
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 60A (Tc) 5W (Ta), 69.4W (Tc) Surface Mount PowerPAK® SO-8
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
122 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4810 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
5W (Ta), 69.4W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SO-8
Package / Case
PowerPAK® SO-8
Base Product Number
SIJ458
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SIJ458DPT1GE3
SIJ458DP-T1-GE3TR
SIJ458DP-T1-GE3CT
SIJ458DP-T1-GE3DKR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIJ458DP-T1-GE3
Dokumente und Medien
Datasheets
1(SIJ458DP)
PCN Obsolescence/ EOL
1(Mult Mosfet EOL 30/Aug/2018)
PCN Assembly/Origin
1(Multiple Fabracation Changes09/Jul/2014)
HTML Datasheet
1(SIJ458DP)
Menge Preis
-
Stellvertreter
Teil Nr. : SI7658ADP-T1-GE3
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 3,486
Einzelpreis. : $2.81000
Ersatztyp. : Similar
Verfügbare Menge. : 3,486
Einzelpreis. : $2.81000
Ersatztyp. : Similar
Teil Nr. : PSMN2R0-30YLE,115
Hersteller. : Nexperia USA Inc.
Verfügbare Menge. : 5,499
Einzelpreis. : $1.78000
Ersatztyp. : Similar
Verfügbare Menge. : 5,499
Einzelpreis. : $1.78000
Ersatztyp. : Similar