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ChinaNTD5806NT4G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
NTD5806NT4G
BESCHREIBUNG
MOSFET N-CH 40V 33A DPAK
DETAILIERTE BESCHREIBUNG
N-Channel 40 V 33A (Tc) 40W (Tc) Surface Mount DPAK
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
2,500
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
19mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
860 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
40W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DPAK
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number
NTD58
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
NTD5806NT4GOSTR
NTD5806NT4GOSCT
2156-NTD5806NT4G-ONTR
NTD5806NT4GOSDKR
ONSONSNTD5806NT4G
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NTD5806NT4G
Dokumente und Medien
Datasheets
1(N(T,V)D5806N)
Environmental Information
1(onsemi RoHS)
PCN Obsolescence/ EOL
1(Multiple Devices 17/Apr/2015)
PCN Assembly/Origin
1(Qualification Multiple Devices 24/Sep/2013)
HTML Datasheet
1(N(T,V)D5806N)
Menge Preis
-
Stellvertreter
Teil Nr. : NTD5802NT4G
Hersteller. : onsemi
Verfügbare Menge. : 19,537
Einzelpreis. : $1.64000
Ersatztyp. : Similar
Verfügbare Menge. : 19,537
Einzelpreis. : $1.64000
Ersatztyp. : Similar