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ChinaEPC2102ENGRT
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
EPC2102ENGRT
BESCHREIBUNG
GANFET 2N-CH 60V 23A DIE
DETAILIERTE BESCHREIBUNG
Mosfet Array 60V 23A (Tj) Surface Mount Die
HERSTELLER
EPC
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
500
Lagerbestände
Technische Daten
Mfr
EPC
Series
eGaN®
Package
Tape & Reel (TR)
Product Status
Discontinued at allaboutcomponents.com
Technology
GaNFET (Gallium Nitride)
Configuration
2 N-Channel (Half Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
23A (Tj)
Rds On (Max) @ Id, Vgs
4.4mOhm @ 20A, 5V
Vgs(th) (Max) @ Id
2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs
6.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
830pF @ 30V
Power - Max
-
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
Die
Supplier Device Package
Die
Base Product Number
EPC210
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0040
Andere Namen
917-EPC2102ENGRDKR
917-EPC2102ENGRTR
917-EPC2102ENGRCT
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/EPC EPC2102ENGRT
Dokumente und Medien
Datasheets
1(EPC2102)
Product Training Modules
1(eGaN Integrated GaN Power)
Environmental Information
()
HTML Datasheet
1(EPC2102)
Menge Preis
-
Stellvertreter
-