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ChinaMJE521
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
MJE521
BESCHREIBUNG
TRANS NPN 40V 4A TO126
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 40 V 4 A 40 W Through Hole TO-126
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
MJE521 Models
STANDARDPAKET
500
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Obsolete
Transistor Type
NPN
Current - Collector (Ic) (Max)
4 A
Voltage - Collector Emitter Breakdown (Max)
40 V
Vce Saturation (Max) @ Ib, Ic
-
Current - Collector Cutoff (Max)
100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 1A, 1V
Power - Max
40 W
Frequency - Transition
-
Operating Temperature
-65°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Supplier Device Package
TO-126
Base Product Number
MJE521
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
MJE521-ND
MJE521OS
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi MJE521
Dokumente und Medien
Datasheets
1(MJE521)
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Devices 06/Oct/2006)
HTML Datasheet
1(MJE521)
EDA Models
1(MJE521 Models)
Menge Preis
-
Stellvertreter
-