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ChinaCY7C1313CV18-200BZXI
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TEILNUMMER DES HERSTELLERS
CY7C1313CV18-200BZXI
BESCHREIBUNG
IC SRAM 18MBIT PARALLEL 165FBGA
DETAILIERTE BESCHREIBUNG
SRAM - Synchronous, QDR II Memory IC 18Mbit Parallel 200 MHz 165-FBGA (13x15)
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
136
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
-
Package
Tray
Product Status
Obsolete
allaboutcomponents.com Programmable
Not Verified
Memory Type
Volatile
Memory Format
SRAM
Technology
SRAM - Synchronous, QDR II
Memory Size
18Mbit
Memory Organization
1M x 18
Memory Interface
Parallel
Clock Frequency
200 MHz
Write Cycle Time - Word, Page
-
Voltage - Supply
1.7V ~ 1.9V
Operating Temperature
-40°C ~ 85°C (TA)
Mounting Type
Surface Mount
Package / Case
165-LBGA
Supplier Device Package
165-FBGA (13x15)
Base Product Number
CY7C1313
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
3A991B2A
HTSUS
8542.32.0041
Andere Namen
2156-CY7C1313CV18-200BZXI-CY
CYPCYPCY7C1313CV18-200BZXI
Kategorie
/Product Index/Integrated Circuits (ICs)/Memory/Memory/Infineon Technologies CY7C1313CV18-200BZXI
Dokumente und Medien
Datasheets
1(CY7C131x,1911CV18)
Featured Product
1(Cypress Memory Products)
PCN Packaging
()
HTML Datasheet
1(CY7C131x,1911CV18)
Menge Preis
-
Stellvertreter
-