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ChinaDMN90H2D2HCTI
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
DMN90H2D2HCTI
BESCHREIBUNG
MOSFET N-CH 900V 6A ITO220AB
DETAILIERTE BESCHREIBUNG
N-Channel 900 V 6A (Tc) 40W (Tc) Through Hole ITO-220AB
HERSTELLER
Diodes Incorporated
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
50
Lagerbestände
Technische Daten
Mfr
Diodes Incorporated
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.2Ohm @ 3A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
20.3 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1487 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
40W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
ITO-220AB
Package / Case
TO-220-3 Full Pack, Isolated Tab
Base Product Number
DMN90
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
DMN90H2D2HCTIDI
DMN90H2D2HCTI-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Diodes Incorporated DMN90H2D2HCTI
Dokumente und Medien
Datasheets
1(DMN90H2D2HCTI)
Environmental Information
1(Diodes Environmental Compliance Cert)
PCN Assembly/Origin
1(Mult Dev Site Chg 6/Aug/2020)
Menge Preis
-
Stellvertreter
-