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ChinaTN2130K1-G-VAO
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TEILNUMMER DES HERSTELLERS
TN2130K1-G-VAO
BESCHREIBUNG
MOSFET N-CH 300V 85MA SOT23-3
DETAILIERTE BESCHREIBUNG
N-Channel 300 V 85mA (Tj) 360mW (Ta) Surface Mount SOT-23-3
HERSTELLER
Microchip Technology
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Microchip Technology
Series
-
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
300 V
Current - Continuous Drain (Id) @ 25°C
85mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)
4.5V
Rds On (Max) @ Id, Vgs
25Ohm @ 120mA, 4.5V
Vgs(th) (Max) @ Id
2.4V @ 1mA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
360mW (Ta)
Operating Temperature
-55°C ~ 150°C (TA)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23-3
Package / Case
TO-236-3, SC-59, SOT-23-3
Base Product Number
TN2130
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Microchip Technology TN2130K1-G-VAO
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