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TEILNUMMER DES HERSTELLERS
IPI80N06S405AKSA2
BESCHREIBUNG
MOSFET N-CHANNEL_55/60V
DETAILIERTE BESCHREIBUNG
N-Channel 60 V 80A (Tc) 107W (Tc) Through Hole PG-TO262-3-1
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
500
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tube
Product Status
Last Time Buy
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
5.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id
4V @ 60µA
Gate Charge (Qg) (Max) @ Vgs
81 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
6500 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
107W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3-1
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IPI80N06
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-IPI80N06S405AKSA2-IT
INFINFIPI80N06S405AKSA2
SP001028724
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPI80N06S405AKSA2
Dokumente und Medien
Datasheets
1(IPx80N06S4-05)
Other Related Documents
1(Part Number Guide)
PCN Assembly/Origin
1(Mult Dev Wafer Fab 12/Feb/2019)
HTML Datasheet
1(IPx80N06S4-05)
Menge Preis
QUANTITÄT: 500
Einzelpreis: $1.25204
Verpackung: Tube
MinMultiplikator: 500
Verpackung: Tube
MinMultiplikator: 500
Stellvertreter
Teil Nr. : IPI80N06S407AKSA2
Hersteller. : Infineon Technologies
Verfügbare Menge. : 500
Einzelpreis. : $2.00000
Ersatztyp. : Similar
Verfügbare Menge. : 500
Einzelpreis. : $2.00000
Ersatztyp. : Similar