Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IRFZ14STRR
BESCHREIBUNG
MOSFET N-CH 60V 10A D2PAK
DETAILIERTE BESCHREIBUNG
N-Channel 60 V 10A (Tc) 3.7W (Ta), 43W (Tc) Surface Mount TO-263 (D2PAK)
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET

Technische Daten

Mfr
Vishay Siliconix
Series
-
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
200mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
300 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.7W (Ta), 43W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
IRFZ14

Umweltverträgliche Exportklassifikationen

RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

-

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix IRFZ14STRR

Dokumente und Medien

Datasheets
1(IRFZ14)

Menge Preis

-

Stellvertreter

Teil Nr. : IRF3808STRLPBF
Hersteller. : Infineon Technologies
Verfügbare Menge. : 3,032
Einzelpreis. : $2.95000
Ersatztyp. : Similar